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June 2008
FDG6322C Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, RDS(ON) = 5.0 @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 @ VGS= -4.5V, RDS(ON) = 1.5 @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
SC70-6
SOT-23
SuperSOTTM-6
SOT-8
SO-8
SOIC-14
G2 D1
S2
1
Q1
6
2
pin 1
5
Q2
SC70-6
Mark: .22
S1
G1
D2
3
4
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
N-Channel P-Channel Units
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
25 8 0.22 0.65
(Note 1)
-25 -8 -0.41 -1.2 0.3 -55 to 150 6
V V A
PD TJ,TSTG ESD
Maximum Power Dissipation
W C kV
Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient
THERMAL CHARACTERISTICS
RJA
(Note1)
415
C/W
(c) 2008 Fairchild Semiconductor Corporation
FDG6322C Rev.F1
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions
Type
N-Ch P-Ch N-Ch P-Ch N-Ch TJ = 55C
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25 oC ID = -250 A, Referenced to 25 oC VDS = 20 V, VGS= 0 V, VDS =-20 V, VGS = 0 V, TJ = 55C VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V
25 -25 25 -22 1 10
V mV/oC A
BVDSS/TJ
IDSS IDSS IGSS
Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current Gate - Body Leakage Current
P-Ch N-Ch P-Ch
-1 -10 100 -100
A nA nA
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25 o C ID= -250 A, Referenced to 25 o C VGS = 4.5 V, ID = 0.22 A TJ =125C VGS = 2.7 V, ID = 0.19 A VGS = -4.5 V, ID = -0.41 A TJ =125C VGS = -2.7 V, ID = -0.25 A
N-Ch P-Ch N-Ch P-Ch N-Ch
0.65 -0.65
0.85 -0.82 -2.1 2.1 2.6 5.3 3.7
1.5 -1.5
V mV/ oC
VGS(th)/TJ
RDS(ON)
4 7 5 1.1 1.9 1.5
P-Ch
0.85 1.2 1.15
ID(ON) gFS
On-State Drain Current Forward Transconductance
VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VDS = 5 V, ID= 0.22 A VDS = -5 V, ID = -0.5 A
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
0.22 -0.41 0.2 0.9 9.5 62 6 34 1.3 10
A S
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz
pF
FDG6322C Rev.F1
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions
Type
N-Ch P-Ch N-Ch P-Ch
Min
Typ
Max
Units
tD(on) tr tD(off) tf Qg Qgs Qgd
Turn - On Delay Time Turn - On Rise Time
N-Channel VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 P-Channel VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 N-Channel VDS= 5 V, ID = 0.22 A, VGS = 4.5 V P- Channel VDS = -5 V, ID = -0.41 A, VGS = -4.5 V
5 7 4.5 8 4 55 3.2 35 0.29 1.1 0.12 0.31 0.03 0.29
10 15 10 16 8 80 7 60 0.4 1.5
nS nS
Turn - Off Delay Time Turn - Off Fall Time
N-Ch P-Ch N-Ch P-Ch
nS nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A
0.25 -0.25 0.8 -0.85 1.2 -1.2
A V
(Note 2) (Note 2)
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA = 415OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDG6322C Rev.F1
Typical Electrical Characteristics: N-Channel
0.5 I D , DRAIN-SOURCE CURRENT (A) 5 DRAIN-SOURCE ON-RESISTANCE
VGS =4.5V 3.5V 3.0V
0.3
R DS(ON), NORMALIZED
0.4
4.5 4 3.5
VGS = 2.5V 2.7V 3.0V 3.5V
2.7V 2.5V
0.2
3 2.5 2
4.0V
2.0V
0.1
4.5V
5.0V
0
0
1
2
3
4
5
0
0.1
0.2 I D , DRAIN CURRENT (A)
0.3
0.4
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 DRAIN-SOURCE ON-RESISTANCE
RDS(ON) , NORMALIZED
20
1.6 1.4 1.2 1 0.8 0.6 -50
V GS = 4.5V
RDS(ON) ON-RESISTANCE(OHM) ,
I D = 0.22A
ID = 0.10A
16
12
8
TA =125C
4
25C
0 1 2 3 4 5
-25
0 25 50 75 100 T , JUNCTION TEMPERATURE (C)
J
125
150
VGS ,GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
VDS = 5V
I D , DRAIN CURRENT (A) 0.15
TJ = -55C
I S , REVERSE DRAIN CURRENT (A)
0.2
0.4
25C 125C
VGS = 0V
0.1
TJ = 125C
0.01
0.1
25C -55C
0.05
0.001
0 0.5
0.0001 1 1.5 2 2.5 3 VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG6322C.Rev F1
Typical Electrical Characteristics: N-Channel (continued)
6 V GS , GATE-SOURCE VOLTAGE (V)
30
I D = 0.22A
5 4 3 2 1 0 0 0.1 0.2
VDS = 5V 10V
CAPACITANCE (pF) 15
Ciss
8
Coss
5
Crss
3 2 0.1
f = 1 MHz VGS = 0 V
0.3 1 3 10 25 V DS , DRAIN TO SOURCE VOLTAGE (V)
0.3
0.4
0.5
0.6
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
50
I D , DRAIN CURRENT (A)
0.3
RD
POWER (W)
S(
O
L N)
IM
IT
10m s
100 ms
1s
40
SINGLE PULSE R JA=415C/W TA= 25C
30
0.1
10
0.03
s
20
V GS = 4.5V SINGLE PULSE RJA = 415 C/W T A = 25C
0.8 2 5
DC
10
0.01 0.4
10
25
40
0 0.0001
0.001
0.01
0.1
1
10
200
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDG6322C Rev.F1
Typical Electrical Characteristics: P-Channel
1.2 -ID , DRAIN-SOURCE CURRENT (A) 2.5 DRAIN-SOURCE ON-RESISTANCE
VGS =-4.5V -3.0V
0.9
-2.7V
R DS(ON) , NORMALIZED
-2.5V
2
VGS = -2.0V
0.6
1.5
-2.5V -2.7V -3.0V -3.5V -4.5V
-2.0V
0.3
1
-1.5V
0 0 1 2 3 4 -VDS , DRAIN-SOURCE VOLTAGE (V)
0.5 0 0.2 0.4 0.6 0.8 1 1.2 -I D , DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with Drain Current and Gate Voltage.
1.6 DRAIN-SOURCE ON-RESISTANCE
5
I D = -0.41A
1.4
R DS(ON) ,ON-RESISTANCE(OHM)
I D = -0.2A
4
V GS = -4.5V
R DS(ON) , NORMALIZED
1.2
3
1
2
TJ = 125 C
1
0.8
25 C
0 1 2 3 4 5
0.6 -50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (C)
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with Temperature.
Figure 14. On-Resistance Variation with Gate-to-Source Voltage.
VDS = -5V
-ID , DRAIN CURRENT (A) 0.8
TJ = -55C 25C 125C
-I S , REVERSE DRAIN CURRENT (A)
1
1
VGS = 0V
0.1
TJ = 125C 25C
0.6
0.01
-55C
0.4
0.001
0.2
0 0.5
1
1.5
2
2.5
3
0.0001 0.2
0.4
0.6
0.8
1
1.2
-V , GATE TO SOURCE VOLTAGE (V) GS
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG6322C Rev.F1
1Typical
Electrical Characteristics: P-Channel (continued)
200
5 -V GS , GATE-SOURCE VOLTAGE (V)
I D = -0.41A
VDS = -5V -10V -15V
CAPACITANCE (pF) 80
4
Ciss
30
3
Coss
2
10 5
1
3 0.1
f = 1 MHz V GS = 0 V
0.3 1 2 5
Crss
0 0 0.4 0.8 Q g , GATE CHARGE (nC) 1.2 1.6
10
25
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
3
50
-I D , DRAIN CURRENT (A)
1 0.5
S RD (O N) LI
T MI
1m s 10 ms
POWER (W)
40
10 0m s
1s
10 s DC
SINGLE PULSE R JA=415C/W TA= 25C
30
0.1 0.05
20
VGS = -4.5V SINGLE PULSE RJA = 415C A TA = 25C
0.2 0.5 1 2
10
0.01 0.1
5
10
25
40
0 0.0001
0.001
0.01
0.1
1
10
200
- V DS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power Dissipation.
FDG6322C Rev.F1
Typical Thermal Characteristics: N & P-Channel (continued)
1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5 0.2 0.1 0.05 0.02 0.01 0.005
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA =415 C/W
t1
t2
TJ - TA = P * R JA (t) Duty Cycle, D = t 1/ t 2
0.002 0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
200
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design.
FDG6322C Rev.F1
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Rev. I34
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c) 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com

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